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PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 - 2170 MHz
Description
The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA210601E Package H-36265-2
PTFA210601F Package H-37265-2
2-Carrier WCDMA Drive-up
VDD = 28 V, IDQ = 550 mA, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing
-25 35
Features
* * *
Drain Efficiency (%)
Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 12 W - Linear Gain = 16 dB - Efficiency = 27.0% - Intermodulation distortion = -38 dBc - Adjacent channel power = -44 dBc Typical CW performance, 2170 MHz, 28 V - Output power at P-1dB = 68 W - Efficiency = 58.5% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power
IM3 (dBc), ACPR (dBc)
-30 -35
Efficiency
30 25
IM3
-40 -45 -50 -55 31 33 35 37 39 41 43 20 15
*
ACPR
10 5
* * *
Average Output Power (dBm)
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 550 mA, POUT = 12 W average 1 = 2135 MHz, 2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
15.0 26.0 --
Typ
16.0 27.0 -38
Max
-- -- -37
Unit
dB % dBc
D
IMD
All published data at TCASE = 25C unless otherwise indicated ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 10
*See Infineon distributor for future availability.
Rev. 03, 2007-11-19
PTFA210601E PTFA210601F
RF Characteristics (cont.)
Two-tone Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 550 mA, POUT = 60 W PEP, = 2140 MHz, tone spacing = 1 MHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
-- -- --
Typ
16 42 -28
Max
-- -- --
Unit
dB % dBc
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA VDS = 28 V, V GS = 0 V VDS = 63 V, V GS = 0 V
Symbol
V(BR)DSS IDSS IDSS RDS(on) VGS IGSS
Min
65 -- -- -- 2.0 --
Typ
-- -- -- 0.15 2.5 --
Max
-- 1.0 10.0 -- 3.0 1.0
Unit
V A A V A
On-State Resistance Operating Gate Voltage Gate Leakage Current
VGS = 10 V, V DS = 0.1 V VDS = 28 V, IDQ = 550 mA VGS = 10 V, V DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C, 60 W CW) TSTG RJC
Symbol
VDSS VGS TJ PD
Value
65 -0.5 to +12 200 196 1.12 -40 to +150 0.89
Unit
V V C W W/C C C/W
Ordering Information
Type and Version
PTFA210601E PTFA210601F V4 V4
Package Type
H-36265-2 H-37265-2
Package Description
Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended
Marking
PTFA210601E PTFA210601F
*See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 03, 2007-11-19
PTFA210601E PTFA210601F
Typical Performance (data taken in a production test fixture)
Broadband Performance
VDD = 28 V, IDQ = 550 mA, POUT = 41 dBm
2-Tone Drive-up
VDD = 28 V, IDQ = 550 mA, f = 2140 MHz, tone spacing = 1 MHz Intermodulation Distortion (dBc)
-5 -25 -30 -35 -40 -45 -50 -55 -60 -65 35 37 39 41 43 45 47 49 45
40
Gain (dB), Efficiency (%)
30 25 20 15
-15 -20 -25 -30
IM3
IM5
35 30 25 20
Efficiency
IM7
15 10 5
Gain
10 -35 2070 2090 2110 2130 2150 2170 2190 2210
Frequency (MHz)
Output Power, PEP (dBm)
Two-carrier WCDMA at Selected Biases
VDD = 28 V, f = 1960 MHz, 3GPP WCDMA signal, P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ
-30 17
Power Sweep, CW Conditions
VDD = 28 V, IDQ = 550 mA, f = 2170 MHz
TCASE = 25C TCASE = 90C
65 55
450 mA 3rd Order IMD (dBc)
-35 -40 -45 -50 -55 31 33 35 37 39 41 43 16
Gain (dB)
650 mA
500 mA
15 14 13
Gain
45 35 25
600 mA 550 mA
Efficiency
12 0 10 20 30 40 50 60 70 15
Output Power, PEP (dBm)
Output Power (W)
Data Sheet
3 of 10
Rev. 03, 2007-11-19
Drain Efficiency (%)
Drain Efficiency (%)
Return Loss
Input Return Loss (dB)
35
-10
Efficiency
40
PTFA210601E PTFA210601F
Typical Performance (cont.)
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 550 mA, f = 2140 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, P/A R = 8.5 dB, 3.84 MHz BW Adjacent Channel Power Ratio (dB)
-25 -30 -35 -40 -45 -50 35 30
IM3, Drain Efficiency and Gain vs. Supply Voltage
IDQ = 550 m A, f = 2140 MHz, POUT (PEP) = 47.8 dBm , tone spacing = 1 MHz
-10 55 50
Drain Efficiency (%)
Efficiency
3rd Order Intermodulation Distortion (dBc)
-15 -20 -25 -30 -35
Efficiency
45 40 35
25 20
IM3 Up
30 25
ACPR Up ACPR Low
15 10 5
Gain
-40 -45 23 24 25 26 27 28 29 30 31 32 33
20 15 10
-55 32 34 36 38 40 42 44
Average Output Power (dBm)
Supply Voltage (V)
Intermodulation Distortion Products vs. Tone Spacing
VDD = 28 V, IDQ = 550 mA, f = 2140 MHz, POUT = 47.8 dBm PEP
-20
1.03
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage, series show current
0.56 A 1.11 A 1.67 A 2.22 A 2.78 A 3.33 A 3.89 A 4.44 A 0.98 0.97 0.96 -20 5.00 A
Intermodulation Distortion (dBc)
-25 -30 -35
3rd Order
Normalized Bias Voltage (V)
1.02 1.01 1.00 0.99
5th
-40 -45 -50 -55 0 5 10 15 20 25 30 35 40
7th
0
20
40
60
80
100
Tone Spacing (MHz)
Case Temperature (C)
Data Sheet
4 of 10
Rev. 03, 2007-11-19
Gain (dB), Drain Efficiency (%)
PTFA210601E PTFA210601F
Broadband Circuit Impedance
R -->
Z0 = 50
Z Source
Z Load
- WAVE LENGTH S TOW A
RD G E NE RA T O
D
G S
2210 MHz
0.0
0.1
0.2
0.3
Frequency
MHz 2070 2110 2140 2170 2210 R
Z Source
jX -5.79 -6.02 -5.95 -5.91 -5.72 10.29 9.46 8.79 8.14 7.19
Z Load
R 4.91 4.83 4.85 4.76 4.66 jX 1.57 1.75 2.12 2.38 2.55
TOW ARD LOAD GTHS EL EN
Z Source
0.1
2210 MHz
2070 MHz
WAV <---
0. 2
See next page for reference circuit information
Data Sheet
5 of 10
Rev. 03, 2007-11-19
0.4
0.2
0 .1
Z Load
2070 MHz
PTFA210601E PTFA210601F
Reference Circuit
C1 0.001F R2 1.3K V R1 1.2K V
QQ1 LM7805
Q1 BCP56 C2 0.001F C3 0.001F R3 2KV R4 2KV R5 10 V C4 10F 35V
VDD
R6 1KV C5 .1F R7 1KV
R8 1KV C6 .1F C7 .01F C8 10pF l7 R9 10 V l10 C9 10pF l6 DUT l2 l3 C10 1.5pF l4 l5 l8 l9 l11 l12 C17 0.7pF C18 10pF l13 C11 10pF C12 .02F C13 1F C14 1F C15 .1F C16 22F 50V
VDD
RF_IN
l1
RF_OUT
a210601ef _sch
Reference circuit schematic for = 2140 MHz
Circuit Assembly Information
DUT PCB PTFA210601E or PTFA210601F 0.76 mm [.030"] thick, r = 3.48 LDMOS Transistor Rogers 4350 1 oz. copper
Microstrip
Electrical Characteristics at 2140 MHz1
0.030 0.038 0.146 0.049 0.016 0.009 0.112 0.018 0.105 0.173 0.051 0.077 0.032 , 50.0 , 50.0 , 50.0 , 6.2 , 6.2 , 80.0 , 80.0 , 8.5 , 8.5 , 67.0 , 41.0 , 41.0 , 50.0
Dimensions: L x W (mm)
2.54 x 1.52 3.15 x 1.52 12.32 x 1.52 3.81 x 22.78 1.17 x 22.78 0.74 x 0.69 9.78 x 0.69 1.35 x 16.26 8.08 x 16.26 14.83 x 1.02 4.11 x 2.29 6.35 x 2.29 2.79 x 1.52
Dimensions: L x W (in.)
0.100 0.124 0.485 0.150 0.046 0.029 0.385 0.053 0.318 0.584 0.162 0.250 0.110 x x x x x x x x x x x x x 0.060 0.060 0.060 0.897 0.897 0.027 0.027 0.640 0.640 0.040 0.090 0.090 0.060
l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 l13
1Electrical characteristics are rounded.
Data Sheet
6 of 10
Rev. 03, 2007-11-19
PTFA210601E PTFA210601F
Reference Circuit (cont.)
R5 C5 R4 QQ1 C3
+ 10
C1 C2 C14 C13 C11
VDD
C4 R6 R7 C6
35V R3 R2
LM
R1
Q1
C15
C16 C12
R8 C7 C8
R9
RF_IN
C9 C10 C17 C18
22 HHD 4 V6
RF_OUT
Reference circuit assembly diagram (not to scale)*
Component
C1, C2, C3 C4 C5, C6, C15 C7 C8, C9, C11, C18 C10 C12 C13, C14 C16 C17 Q1 QQ1 R1 R2 R3 R4 R5, R9 R6, R7, R8
Description
Capacitor, 0.001 F Tantalum capacitor, 10 F, 35 V Capacitor, 0.1 F Capacitor, 0.01 F Ceramic capacitor, 10 pF Ceramic capacitor, 1.5 pF Capacitor, 0.02 F Capacitor, 1.0 F Electrolytic capacitor, 22 F, 50 V Ceramic capacitor, 0.7 pF Transistor Voltage regulator Chip resistor, 1.2k ohms Chip resistor, 1.3k ohms Chip resistor, 2k ohms Potentiometer, 2k ohms Chip resistor, 10 ohms Chip resistor, 1k ohms
Suggested Manufacturer
Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC Digi-Key Digi-Key ATC Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key
a2 1060 1ef _assy
P/N or Comment
PCC1772CT-ND PCS6106TR-ND PCC104BCT-ND 100B 103 100B 100 100B 1R5 200B 203 445-1411-1-ND PCE3374CT-ND 100B 0R7 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P10ECT-ND P1KECT-ND
*Gerber Files for this circuit available on request Data Sheet 7 of 10 Rev. 03, 2007-11-19
PTFA210601E PTFA210601F
Package Outline Specifications Package H-36265-2
2X 7.11 [.280] C L
(45 X 2.03 [.080])
D
2.590.51 [.102.020] 15.340.51 [.604.020] FLANGE 9.78 [.385]
S
C L LID 10.160.25 [.400.010]
G
2X R1.60 [R.063] 2x 7.11 [.280] 15.23 [.600] 10.160.25 [.400.010] SPH 1.57 [.062] 4X R1.52 [R.060]
3.560.38 [.140.015 0.0381 [.0015] -A2 0 0 7 1 1 1 6 _ h 3 6 +3 7 2 6 5 _ P O s . s d _ h 3 6 2 6 5 v 2
20.31 [.800]
1.02 [.040]
Diagram Notes--unless otherwise specified: 1. 2. 3. 4. 5. 6. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]. All tolerances 0.127 [.005] unless specified otherwise. Pins: D = drain, S = source, G = gate. Interpret dimensions and tolerances per ASME Y14.5M-1994. Primary dimensions are mm. Alternate dimensions are inches. Gold plating thickness: S, D, G - flange & leads: 1.14 0.38 micron [45 15 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 8 of 10 Rev. 03, 2007-11-19
PTFA210601E PTFA210601F
Package Outline Specifications (cont.) Package H-37265-2
(45 X 2.03 [.080])
C L
2.590.51 [.102.020]
D
15.34.51 [.604.020]
LID 10.160.25 [.400.010] FLANGE 10.16 [.400]
C L
10.16 [.400]
G
2X 7.11 [.280] FLANGE 4X R0.63 [R.025] MAX
LID 10.160.25 [.400.010] SPH 1.57 [.062]
|0.025 [.001]|-A3.56.38 [.140.015]
S
10.16 [.400]
1.02 [.040]
071119_h-36+37265_POs_h-37265-2
Diagram Notes--unless otherwise specified: 1. 2. 3. 4. 5. 6. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]. All tolerances 0.127 [.005] unless specified otherwise. Pins: D = drain, S = source, G = gate. Interpret dimensions and tolerances per ASME Y14.5M-1994. Primary dimensions are mm. Alternate dimensions are inches. Gold plating thickness: S, D, G - flange & leads: 1.14 0.38 micron [45 15 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products
Data Sheet
9 of 10
Rev. 03, 2007-11-19
PTFA210601E/F Confidential, Limited Internal Distribution Revision History: 2007-11-19 2007-03-02, Data Sheet Previous Version: Page 1, 2, 8, 9 Subjects (major changes since last revision) Update to product V4, with new package technologies. Update package outline diagrams.
Data Sheet
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International
GOLDMOS(R) is a registered trademark of Infineon Technologies AG.
Edition 2007-11-19 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2005. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 03, 2007-11-19

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